产品系列
产品系列
FDB12N50FTM-WS
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : UniFET?
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 700 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1395pF @ 25V
Power Dissipation (Max) : 165W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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