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产品系列
FDD10N20LZTM
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : UniFET?
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 360 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 585pF @ 25V
Power Dissipation (Max) : 83W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DPAK
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
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