产品系列
产品系列
TPS1101D
- Manufacturer : Texas Instruments
Packaging : Tube
Alternate Packaging
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 15V
Current - Continuous Drain (Id) @ 25°C : 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.7V, 10V
Rds On (Max) @ Id, Vgs : 90 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 11.25nC @ 10V
Vgs (Max) : +2V, -15V
Power Dissipation (Max) : 791mW (Ta)
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOIC
Package / Case : 8-SOIC (0.154", 3.90mm Width)
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