罗斌森
  • 2N5191G

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Active
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 4A
    Voltage - Collector Emitter Breakdown (Max) : 60V
    Vce Saturation (Max) @ Ib, Ic : 1.4V @ 1A, 4A
    Current - Collector Cutoff (Max) : 1mA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 25 @ 1.5A, 2V
    Power - Max : 40W
    Frequency - Transition : 2MHz
    Operating Temperature : -65°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-225AA, TO-126-3
    Supplier Device Package : TO-225AA

极速报价

型号
品牌 封装 批号 查看
KAI-4011-ABA-CD-AE ON New 详细
FQPF19N10L ON TO-220F New 详细
LC75884E-E ON 80-QFP (14x20) New 详细
BZX84C22 ON SOT-23-3 (TO-236) New 详细
MC33204DR2 ON 14-SOIC New 详细
NB3N15625MNG ON 20-QFN (4x4) New 详细
FQPF6N70 ON TO-220F New 详细
NCV891334MW50R2G ON 12-DFN (4x4) New 详细
BAT54HT1G ON SOD-323 New 详细
KAI-16000-AXA-JR-B2 ON 40-CPGA (44.45x32) New 详细
SA17A ON DO-15 New 详细
BC308ATF ON TO-92-3 New 详细
MC74ACT241MELG ON SOEIAJ-20 New 详细
NCL30160GEVB ON New 详细
FLZ7V5B ON SOD-80 New 详细
MOC3162FR2M ON 6-SMD New 详细
FLZ16VA ON SOD-80 New 详细
NGB8206NT4 ON D2PAK New 详细
74AC241MTC ON 20-TSSOP New 详细
FUSB303GEVB ON New 详细