罗斌森
  • 2N5210BU

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Last Time Buy
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Vce Saturation (Max) @ Ib, Ic : 700mV @ 1mA, 10mA
    Current - Collector Cutoff (Max) : 50nA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 100μA, 5V
    Power - Max : 625mW
    Frequency - Transition : 30MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA)
    Supplier Device Package : TO-92-3

极速报价

型号
品牌 封装 批号 查看
NCV8720BMT110TBG ON 6-WDFN (2x2) New 详细
74ACT258SC ON 16-SOIC New 详细
MOC8113300 ON 6-DIP New 详细
NTR1P02T3G ON SOT-23-3 (TO-236) New 详细
FSFR1800 ON 9-SIP New 详细
MC10EL51DTR2 ON New 详细
FOD817A3S ON 4-SMD New 详细
NLVHC00ADR2G ON 14-SOIC New 详细
CAT34C02HU4IGT4A ON 8-UDFN-EP (2x3) New 详细
NCP305LSQ11T1G ON SC-82AB New 详细
FAN3228CMX-F085 ON 8-SOIC New 详细
LC75824W-E ON 64-STQFP (10x10) New 详细
KF347 ON 14-DIP New 详细
BC560BBU ON TO-92-3 New 详细
NM93CS06M ON 14-SOIC New 详细
SS14 ON SMA (DO-214AC) New 详细
FES6G ON TO-277-3 New 详细
MC78M12ACT ON TO-220AB New 详细
2N6387 ON TO-220AB New 详细
NDS356P ON SuperSOT-3 New 详细