产品系列
产品系列
FDMC2610
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : UniFET?
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 2.2A (Ta), 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 200 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 18nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 960pF @ 100V
Power Dissipation (Max) : 2.1W (Ta), 42W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-MLP (3.3x3.3)
Package / Case : 8-PowerWDFN
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