产品系列
产品系列
ECH8309-TL-H
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 16 mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs : 18nC @ 4.5V
Vgs (Max) : ±10V
Input Capacitance (Ciss) (Max) @ Vds : 1780pF @ 6V
Power Dissipation (Max) : 1.5W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-ECH
Package / Case : 8-SMD, Flat Lead
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