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产品系列
SCT10N120
- Manufacturer : STMicroelectronics
Packaging : Tube
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 690 mOhm @ 6A, 20V
Vgs(th) (Max) @ Id : 3.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 290pF @ 400V
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : -55°C ~ 200°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : HiP247?
Package / Case : TO-247-3
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