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  • SCT10N120

  • Manufacturer : STMicroelectronics
    Packaging : Tube
    Part Status : Active
    FET Type : N-Channel
    Technology : SiCFET (Silicon Carbide)
    Drain to Source Voltage (Vdss) : 1200V
    Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 20V
    Rds On (Max) @ Id, Vgs : 690 mOhm @ 6A, 20V
    Vgs(th) (Max) @ Id : 3.5V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 22nC @ 20V
    Vgs (Max) : +25V, -10V
    Input Capacitance (Ciss) (Max) @ Vds : 290pF @ 400V
    Power Dissipation (Max) : 150W (Tc)
    Operating Temperature : -55°C ~ 200°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : HiP247?
    Package / Case : TO-247-3

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