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SCTW90N65G2V
- Manufacturer : STMicroelectronics
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 18V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 50A, 18V
Vgs(th) (Max) @ Id : 5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 157nC @ 18V
Vgs (Max) : +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 3300pF @ 400V
Power Dissipation (Max) : 390W (Tc)
Operating Temperature : -55°C ~ 200°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : HiP247?
Package / Case : TO-247-3
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