产品系列
产品系列
STI19NM65N
- Manufacturer : STMicroelectronics
Packaging : Tube
Series : MDmesh? II
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 15.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 270 mOhm @ 7.75A, 10V
Vgs(th) (Max) @ Id : 4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 55nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 50V
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : I2PAK
Package / Case : TO-262-3 Long Leads, I2Pak, TO-262AA
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