罗斌森
  • DS1230AB-120+

  • Manufacturer : Maxim Integrated
    Packaging : Tube
    Part Status : Active
    Memory Type : Non-Volatile
    Memory Format : NVSRAM
    Technology : NVSRAM (Non-Volatile SRAM)
    Memory Size : 256Kb (32K x 8)
    Write Cycle Time - Word, Page : 120ns
    Access Time : 120ns
    Memory Interface : Parallel
    Voltage - Supply : 4.75V ~ 5.25V
    Operating Temperature : 0°C ~ 70°C (TA)
    Mounting Type : Through Hole
    Package / Case : 28-DIP Module (0.600", 15.24mm)
    Supplier Device Package : 28-EDIP

极速报价

型号
品牌 封装 批号 查看
MAX822MUS+T Maxim SOT-143-4 New 详细
MAX16072RS30D1+T Maxim 4-UCSP New 详细
MAX9919FASA+T Maxim 8-SOIC-EP New 详细
MAX1280BCUP Maxim 20-TSSOP New 详细
DS21352L+ Maxim 100-LQFP (14x14) New 详细
MAX6190AESA Maxim 8-SOIC New 详细
MAX4574CEI+T Maxim 28-QSOP New 详细
DS1855B-050+ Maxim 16-CSBGA (4x4) New 详细
MAX6301CPA Maxim 8-PDIP New 详细
MAX13336EGEE/V+ Maxim 16-QSOP New 详细
MAX113CNG+ Maxim 24-PDIP New 详细
MAX16812ATI+ Maxim 28-TQFN (5x5) New 详细
MAX16129UAAGA+ Maxim 8-uMAX New 详细
MAX1664EUP Maxim 20-TSSOP New 详细
MAX5070BASA-T Maxim 8-SOIC New 详细
MAX9751ETI+ Maxim 28-TQFN (5x5) New 详细
MAX6804US30D1+T Maxim SOT-143-4 New 详细
MAX8544EEP+ Maxim 20-QSOP New 详细
MAX20745EPL+ Maxim 15-FCQFN (6x4.15) New 详细
MAX333CWP+ Maxim 20-SOIC New 详细