罗斌森
  • DS1230Y-120IND

  • Manufacturer : Maxim Integrated
    Packaging : Tube
    Part Status : Obsolete
    Memory Type : Non-Volatile
    Memory Format : NVSRAM
    Technology : NVSRAM (Non-Volatile SRAM)
    Memory Size : 256Kb (32K x 8)
    Write Cycle Time - Word, Page : 120ns
    Access Time : 120ns
    Memory Interface : Parallel
    Voltage - Supply : 4.5V ~ 5.5V
    Operating Temperature : -40°C ~ 85°C (TA)
    Mounting Type : Through Hole
    Package / Case : 28-DIP Module (0.600", 15.24mm)
    Supplier Device Package : 28-EDIP

极速报价

型号
品牌 封装 批号 查看
MAXQ7670ATL/V+T Maxim 40-TQFN-EP (5x5) New 详细
MAX7407CSA+ Maxim 8-SOIC New 详细
MAX4604CSE+T Maxim 16-SO New 详细
MAX13047EETA+T Maxim 8-TDFN-EP (2x2) New 详细
MAX3320BEAP+T Maxim 20-SSOP New 详细
MAX9610TEXK+T Maxim SC-70-5 New 详细
MAX5556ESA+T Maxim 8-SOIC New 详细
MAX5160NEUA Maxim 8-uMAX New 详细
MAX9610TELT+T Maxim 6-UDFN (2x2) New 详细
MAX16910EATA8/V+ Maxim 8-TDFN-EP (3x3) New 详细
MAX6869UK23D3S+T Maxim SOT-23-5 New 详细
DS1236A-10+ Maxim 16-PDIP New 详细
MAX4376TAUK+T Maxim SOT-23-5 New 详细
DS21T09S Maxim 28-SOIC New 详细
MAX3632ETG+T Maxim 24-TQFN (4x4) New 详细
MAX6313UK30D1-T Maxim SOT-23-5 New 详细
MAX4666CPE+ Maxim 16-PDIP New 详细
MAX4354EUD Maxim 14-TSSOP New 详细
5962-9071201MPA Maxim 8-CDIP New 详细
MAX208CAG+ Maxim 24-SSOP New 详细