罗斌森
  • DS1245Y-120IND+

  • Manufacturer : Maxim Integrated
    Packaging : Tube
    Part Status : Active
    Memory Type : Non-Volatile
    Memory Format : NVSRAM
    Technology : NVSRAM (Non-Volatile SRAM)
    Memory Size : 1Mb (128K x 8)
    Write Cycle Time - Word, Page : 120ns
    Access Time : 120ns
    Memory Interface : Parallel
    Voltage - Supply : 4.5V ~ 5.5V
    Operating Temperature : -40°C ~ 85°C (TA)
    Mounting Type : Through Hole
    Package / Case : 32-DIP Module (0.600", 15.24mm)
    Supplier Device Package : 32-EDIP

极速报价

型号
品牌 封装 批号 查看
71M6532F-IGT/F Maxim 100-LQFP (14x14) New 详细
MAX6513TT075+T Maxim 6-TDFN-EP (3x3) New 详细
DS18030-010+ Maxim 16-PDIP New 详细
MAX8845ZEVKIT+ Maxim New 详细
MAX9986ETP+TD Maxim 20-TQFN-EP (5x5) New 详细
MAX16999AUA10+ Maxim 8-uMax-EP New 详细
MAX110ACPE+ Maxim 16-PDIP New 详细
MAX4294ESD-T Maxim 14-SOIC New 详细
MAX6386LT22D2+T Maxim 6-uDFN (1.5x1.0) New 详细
MAX14632EZK+T Maxim SOT-23-5 New 详细
MAX5921EESA+ Maxim 8-SOIC New 详细
MAX2828ETN+ Maxim 56-TQFN (8x8) New 详细
MAX9177EUB+ Maxim 10-uMAX New 详细
MAX6632MTT+T Maxim 6-TDFN-EP (3x3) New 详细
MAX196BCNI+ Maxim 28-PDIP New 详细
MAX6397YATA+T Maxim 8-TDFN-EP (3x3) New 详细
MAX399EPE Maxim 16-PDIP New 详细
DS18B20-PAR+T&R Maxim TO-92-3 New 详细
DS1501WS Maxim 28-SOIC New 详细
DS28E50Q+U Maxim 6-TDFN (3x3) New 详细