罗斌森
  • DS1245Y-120IND+

  • Manufacturer : Maxim Integrated
    Packaging : Tube
    Part Status : Active
    Memory Type : Non-Volatile
    Memory Format : NVSRAM
    Technology : NVSRAM (Non-Volatile SRAM)
    Memory Size : 1Mb (128K x 8)
    Write Cycle Time - Word, Page : 120ns
    Access Time : 120ns
    Memory Interface : Parallel
    Voltage - Supply : 4.5V ~ 5.5V
    Operating Temperature : -40°C ~ 85°C (TA)
    Mounting Type : Through Hole
    Package / Case : 32-DIP Module (0.600", 15.24mm)
    Supplier Device Package : 32-EDIP

极速报价

型号
品牌 封装 批号 查看
MAX15301ETI+ Maxim 32-TQFN-EP (5x5) New 详细
LMX331AUK+T Maxim SOT-23-5 New 详细
MAX1242BESA Maxim 8-SOIC New 详细
MAX4617CPE+ Maxim 16-PDIP New 详细
MAX311CWN Maxim 18-SOIC W New 详细
MAX521AEAG Maxim 24-SSOP New 详细
MAX1739EEP+T Maxim 20-QSOP New 详细
DS1302ZN Maxim 8-SOIC New 详细
DS1815-10 Maxim TO-92-3 New 详细
MAX8667ETEHR+ Maxim 16-TQFN (3x3) New 详细
MAX6339JUT+T Maxim SOT-23-6 New 详细
MAX6385XS24D6-T Maxim SC-70-4 New 详细
MAX6388XS17D4-T Maxim SC-70-4 New 详细
MAX6648YMUA+ Maxim 8-uMAX New 详细
MAX6713TEXS+T Maxim SC-70-4 New 详细
DS1100Z-25L Maxim 8-SOIC New 详细
MAX20021ATIA/V+ Maxim 28-TQFN (5x5) New 详细
73M1906B-IM/F Maxim 32-QFN (5x5) New 详细
MAX6454UT29S+ Maxim SOT-23-6 New 详细
MAX4077ESA-T Maxim 8-SOIC New 详细