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产品系列
FDB86102LZ
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : PowerTrench?
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 8.3A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 24 mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id : 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 21nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1275pF @ 50V
Power Dissipation (Max) : 3.1W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263AB
Package / Case : TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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