产品系列
FDC6301N
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 25V
Current - Continuous Drain (Id) @ 25°C : 220mA
Rds On (Max) @ Id, Vgs : 4 Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id : 1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 9.5pF @ 10V
Power - Max : 700mW
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-23-6 Thin, TSOT-23-6
Supplier Device Package : SuperSOT?-6
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