罗斌森
  • FPN660A

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    Transistor Type : PNP
    Current - Collector (Ic) (Max) : 3A
    Voltage - Collector Emitter Breakdown (Max) : 60V
    Vce Saturation (Max) @ Ib, Ic : 400mV @ 200mA, 2A
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 250 @ 500mA, 2V
    Power - Max : 1W
    Frequency - Transition : 75MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 Long Body
    Supplier Device Package : TO-226

极速报价

型号
品牌 封装 批号 查看
NTMD6N02R2G ON 8-SOIC New 详细
FDMS3672 ON 8-MLP (5x6), Power56 New 详细
1N5368BG ON Axial New 详细
MMBZ5225BLT1 ON SOT-23-3 (TO-236) New 详细
74LVTH16244MEA ON 48-SSOP New 详细
MC78M12ABTG ON TO-220AB New 详细
NCV8504PWADJR2G ON 16-SOIC New 详细
FQB5N60CTM-WS ON D2PAK (TO-263AB) New 详细
74LVQ138SJX ON 16-SOP New 详细
MMBD1201 ON SOT-23-3 New 详细
FODM3022R3V ON 4-SMD New 详细
NTGS3455T1 ON 6-TSOP New 详细
1N914A_T50R ON DO-35 New 详细
NCP6356BFCCT1G ON New 详细
DM74ALS808AN ON 20-PDIP New 详细
MBRF30H150CTH ON New 详细
CAT24C16YI-GT3 ON 8-TSSOP New 详细
NTR1P02T3G ON SOT-23-3 (TO-236) New 详细
HMHA2801CR2 ON 4-Mini-Flat New 详细
KSC2310YNBU ON TO-92-3 New 详细