罗斌森
  • FJN3304RTA

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Box (TB)
    Part Status : Obsolete
    Transistor Type : NPN - Pre-Biased
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 47 kOhms
    Resistor - Emitter Base (R2) : 47 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
    Vce Saturation (Max) @ Ib, Ic : 300mV @ 500μA, 10mA
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    Frequency - Transition : 250MHz
    Power - Max : 300mW
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Supplier Device Package : TO-92-3

极速报价

型号
品牌 封装 批号 查看
NSBC143ZPDP6T5G ON SOT-963 New 详细
BD1756STU ON TO-126-3 New 详细
1N914B_S00Z ON DO-35 New 详细
NB4N855SMR4G ON 10-MSOP New 详细
NCV8184DR2 ON 8-SOIC New 详细
NSS40302PDR2G ON 8-SOIC New 详细
FDS4675 ON 8-SOIC New 详细
SE5532AD8G ON 8-SOIC New 详细
MC33166TG ON TO-220-5 New 详细
AXDBG-2-GEVK ON New 详细
HMHAA280 ON 4-Mini-Flat New 详细
74F175PC ON New 详细
2N5459_D74Z ON TO-92-3 New 详细
FQP5N30 ON TO-220-3 New 详细
PN3645 ON TO-92-3 New 详细
FJE3303H2 ON TO-126-3 New 详细
LB11651H-TLM-E ON 36-HSOP New 详细
MC74VHC1G07DFT2 ON SC-88A (SC-70-5/SOT-353) New 详细
NCP4682DSQ25T1G ON SC-82AB New 详细
1N5821G ON DO-201AD New 详细