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FJN3315RBU
- Manufacturer : ON Semiconductor
Packaging : Bulk
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 500μA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 250MHz
Power - Max : 300mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package : TO-92-3
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