罗斌森
  • FJNS3203RBU

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    Transistor Type : NPN - Pre-Biased
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 22 kOhms
    Resistor - Emitter Base (R2) : 22 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
    Vce Saturation (Max) @ Ib, Ic : 300mV @ 500μA, 10mA
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    Frequency - Transition : 250MHz
    Power - Max : 300mW
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 Short Body
    Supplier Device Package : TO-92S

极速报价

型号
品牌 封装 批号 查看
FDFM2P110 ON MicroFET 3x3mm New 详细
MC10EP29DTG ON New 详细
TL431AILPRA ON TO-92-3 New 详细
74VHC112N ON New 详细
NP1100SBMCT3G ON New 详细
FQP1N60 ON TO-220-3 New 详细
SMF16AT1 ON SOD-123FL New 详细
FPA6101MTCX ON 28-TSSOP New 详细
ADM1030ARQ ON 16-QSOP New 详细
MC10E452FN ON New 详细
ML4800CP ON 16-PDIP New 详细
P2782AF-08SR ON 8-SOIC New 详细
CAT24C02YI-G ON 8-TSSOP New 详细
LP2951CMX ON 8-SOIC New 详细
NJD2873T4G ON DPAK New 详细
FCB11N60FTM ON D2PAK New 详细
NCV809MTRG ON SOT-23-3 (TO-236) New 详细
MC100EL07DTG ON 8-TSSOP New 详细
MC10EP16TDTR2 ON 8-TSSOP New 详细
QSA157 ON New 详细