罗斌森
  • HGTG30N60C3D

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Not For New Designs
    Voltage - Collector Emitter Breakdown (Max) : 600V
    Current - Collector (Ic) (Max) : 63A
    Current - Collector Pulsed (Icm) : 252A
    Vce(on) (Max) @ Vge, Ic : 1.8V @ 15V, 30A
    Power - Max : 208W
    Switching Energy : 1.05mJ (on), 2.5mJ (off)
    Input Type : Standard
    Gate Charge : 162nC
    Reverse Recovery Time (trr) : 60ns
    Operating Temperature : -40°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-247-3
    Supplier Device Package : TO-247

极速报价

型号
品牌 封装 批号 查看
NLAS4053QSR ON 16-QSOP New 详细
74ACTQ74SJ ON New 详细
CD4520BCN ON New 详细
FOD2741AT ON 8-DIP New 详细
LV8712T-MPB-H ON 24-TSSOP New 详细
NCV4299D1R2 ON 8-SOIC New 详细
74F1071MTCX ON 20-TSSOP New 详细
KSD1362RTU ON TO-220F New 详细
MOC217M ON 8-SOIC New 详细
MST4141C ON New 详细
FDS9934C ON 8-SOIC New 详细
MPS2222ARLRPG ON TO-92-3 New 详细
FDS3992 ON 8-SOIC New 详细
1N916A ON DO-35 New 详细
FQA65N20 ON TO-3PN New 详细
TIP31BG ON TO-220AB New 详细
MCH6603-TL-H ON 6-MCPH New 详细
GBPC2510W ON GBPC-W New 详细
EGP30K ON DO-201AD New 详细
MURHB840CTG ON D2PAK-3 New 详细