罗斌森
  • HGTP10N120BN

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Not For New Designs
    IGBT Type : NPT
    Voltage - Collector Emitter Breakdown (Max) : 1200V
    Current - Collector (Ic) (Max) : 35A
    Current - Collector Pulsed (Icm) : 80A
    Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 10A
    Power - Max : 298W
    Switching Energy : 320μJ (on), 800μJ (off)
    Input Type : Standard
    Gate Charge : 100nC
    Td (on/off) @ 25°C : 23ns/165ns
    Test Condition : 960V, 10A, 10 Ohm, 15V
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-220-3
    Supplier Device Package : TO-220-3

极速报价

型号
品牌 封装 批号 查看
74LVQ125SC ON 14-SOIC New 详细
STK672-442BNGEVB ON New 详细
2SK715V ON 3-SPA New 详细
CAT1162WI-30-G ON 8-SOIC New 详细
LV5636VH-MPB-H ON 14-HSSOP New 详细
FCD7N60TM ON D-Pak New 详细
2SK4065-DL-E ON SMP-FD New 详细
LM317LM ON 8-SOIC New 详细
2SC5242OTU ON TO-3P New 详细
NTD3055L170-1G ON I-PAK New 详细
LF353N ON 8-DIP New 详细
MAN5760 ON New 详细
MC74HC589ADTR2 ON 16-TSSOP New 详细
TIL111W ON 6-DIP New 详细
1N4002 ON DO-41 New 详细
FDS7760A ON 8-SOIC New 详细
NCP6132MNR2G ON 60-QFN (7x7) New 详细
74LCX08MX ON 14-SOIC New 详细
MC7805ABTG ON TO-220AB New 详细
NZ9F2V7T5G ON SOD-923 New 详细