罗斌森
  • HGTP12N60A4D

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Not For New Designs
    Voltage - Collector Emitter Breakdown (Max) : 600V
    Current - Collector (Ic) (Max) : 54A
    Current - Collector Pulsed (Icm) : 96A
    Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 12A
    Power - Max : 167W
    Switching Energy : 55μJ (on), 50μJ (off)
    Input Type : Standard
    Gate Charge : 78nC
    Td (on/off) @ 25°C : 17ns/96ns
    Test Condition : 390V, 12A, 10 Ohm, 15V
    Reverse Recovery Time (trr) : 30ns
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-220-3
    Supplier Device Package : TO-220-3

极速报价

型号
品牌 封装 批号 查看
3EZ15D5G ON DO-41 New 详细
2N5551RLRM ON TO-92-3 New 详细
FAN6604MRMX ON 8-SOP New 详细
MC100EL1648MEL ON SOEIAJ-14 New 详细
VN2222LL ON TO-92-3 New 详细
NB7N017MMNR2 ON 52-QFN (8x8) New 详细
CNY17F3 ON 6-DIP New 详细
STD25P03LT4G ON DPAK New 详细
STK433-060N-E ON 15-SIP New 详细
MBRF30H150CTH ON New 详细
MMSZ5256BT3 ON SOD-123 New 详细
74LCX16501MEAX ON 56-SSOP New 详细
FJX4008RTF ON SC-70 (SOT323) New 详细
FEP16GT ON TO-220-3 New 详细
1N5252B ON DO-35 New 详细
NCP6332BMTAATBG ON 8-WDFN (2x2) New 详细
MC14049BFELG ON 16-SOEIAJ New 详细
74LVQ241SC ON 20-SOIC New 详细
FQPF9N50T ON TO-220F New 详细
NOA3315W ON New 详细