罗斌森
  • HGTP12N60C3D

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Not For New Designs
    Voltage - Collector Emitter Breakdown (Max) : 600V
    Current - Collector (Ic) (Max) : 24A
    Current - Collector Pulsed (Icm) : 96A
    Vce(on) (Max) @ Vge, Ic : 2.2V @ 15V, 15A
    Power - Max : 104W
    Switching Energy : 380μJ (on), 900μJ (off)
    Input Type : Standard
    Gate Charge : 48nC
    Reverse Recovery Time (trr) : 40ns
    Operating Temperature : -40°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-220-3
    Supplier Device Package : TO-220-3

极速报价

型号
品牌 封装 批号 查看
74AC20SJX ON 14-SOP New 详细
KA78L08ADTF ON 8-SOIC New 详细
LC709202FRD-01-MH ON 16-VCT (2.6x2.6) New 详细
FMG2G75US60 ON 7PM-GA New 详细
FDFMA2N028Z ON 6-MicroFET (2x2) New 详细
MMSZ5230ET1 ON SOD-123 New 详细
74ACTQ18823MTD ON New 详细
MC100H606FNG ON 28-PLCC (11.51x11.51) New 详细
MMSZ5226BT1 ON SOD-123 New 详细
LV8800V-TLM-E ON 16-SSOP New 详细
SA70A ON DO-15 New 详细
MC10H188FNR2G ON 20-PLCC (9x9) New 详细
FJNS4209RBU ON TO-92S New 详细
MUN5312DW1T1G ON SC-88/SC70-6/SOT-363 New 详细
NB3X6X1XXG8DFNEVK ON New 详细
HUFA75829D3ST ON TO-252AA New 详细
CAT28C16AWI-12T ON 24-SOIC New 详细
ES2A ON DO-214AA (SMB) New 详细
MUN5137T1 ON SC-70-3 (SOT323) New 详细
FODM121BR1 ON 4-SMD New 详细