罗斌森
  • FJP3835TU

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Obsolete
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 8A
    Voltage - Collector Emitter Breakdown (Max) : 120V
    Vce Saturation (Max) @ Ib, Ic : 500mV @ 300mA, 3A
    Current - Collector Cutoff (Max) : 100μA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 3A, 4V
    Power - Max : 50W
    Frequency - Transition : 30MHz
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-220-3
    Supplier Device Package : TO-220-3

极速报价

型号
品牌 封装 批号 查看
DF06S1 ON 4-SDIP New 详细
FOD817BW ON 4-DIP New 详细
FQB5P10TM ON D2PAK (TO-263AB) New 详细
Q32M210GEVK ON New 详细
MOC8112300W ON 6-DIP New 详细
74ACT151MTCX ON 16-TSSOP New 详细
SC258NG ON 8-PDIP New 详细
MC33179DTBR2G ON 14-TSSOP New 详细
SBS818-TL-E ON 8-EMH New 详细
MUN2114T1G ON SC-59 New 详细
KSD471ACGTA ON TO-92-3 New 详细
74LVX32SJ ON 14-SOP New 详细
CAT25M01YI-G ON 8-TSSOP New 详细
SMF9.0AT1 ON SOD-123FL New 详细
NTD14N03R-001 ON I-PAK New 详细
MC74ACT373N ON 20-PDIP New 详细
NCP5500DTADJRKG ON DPAK-5 New 详细
NLU1GT126CMUTCG ON 6-UDFN (1x1) New 详细
FDMC0205 ON New 详细
KSB708OTU ON TO-220-3 New 详细