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产品系列
FQN1N60CTA
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : QFET?
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 11.5 Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id : 4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 6.2nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 170pF @ 25V
Power Dissipation (Max) : 1W (Ta), 3W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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