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产品系列
LND250K1-G
- Manufacturer : Microchip Technology
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 13mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 0V
Rds On (Max) @ Id, Vgs : 1000 Ohm @ 500μA, 0V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 10pF @ 25V
FET Feature : Depletion Mode
Power Dissipation (Max) : 360mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23 (TO-236AB)
Package / Case : TO-236-3, SC-59, SOT-23-3
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