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KSD2012GTU
- Manufacturer : ON Semiconductor
Packaging : Tube
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 3A
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : 1V @ 200mA, 2A
Current - Collector Cutoff (Max) : 100μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 150 @ 500mA, 5V
Power - Max : 25W
Frequency - Transition : 3MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3 Full Pack
Supplier Device Package : TO-220F
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