罗斌森
  • KSD261CGBU

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 500mA
    Voltage - Collector Emitter Breakdown (Max) : 20V
    Vce Saturation (Max) @ Ib, Ic : 400mV @ 50mA, 500mA
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 100mA, 1V
    Power - Max : 500mW
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Supplier Device Package : TO-92-3

极速报价

型号
品牌 封装 批号 查看
3LP01S-K-TL-E ON SMCP New 详细
MC74LCX14MG ON SOEIAJ-14 New 详细
MC7808CDTRKG ON DPAK New 详细
CPH6444-TL-W ON 6-CPH New 详细
MAC97A8RLRPG ON TO-92-3 New 详细
FSA3157BFHX ON 6-MicroPak2? New 详细
FSSD06BQX ON 24-MLP (3.5x4.5) New 详细
LM385BD-2.5R2G ON 8-SOIC New 详细
NTD18N06 ON DPAK New 详细
LC75884WHS-E ON 80-SQFP (12x12) New 详细
NDS352AP ON SuperSOT-3 New 详细
MMSD301T1G ON SOD-123 New 详细
FQE10N20LCTU ON TO-126-3 New 详细
MC14028BDR2G ON 16-SOIC New 详细
FSDL0165RL ON 8-LSOP New 详细
NJW44H11G ON TO-3P-3L New 详细
MC10EP32MNR4G ON 8-DFN (2x2) New 详细
DTC114YM3T5G ON SOT-723 New 详细
STK621-015B-E ON New 详细
MJE350STU ON TO-126-3 New 详细