罗斌森
  • KSD261YBU

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 500mA
    Voltage - Collector Emitter Breakdown (Max) : 20V
    Vce Saturation (Max) @ Ib, Ic : 400mV @ 50mA, 500mA
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 100mA, 1V
    Power - Max : 500mW
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Supplier Device Package : TO-92-3

极速报价

型号
品牌 封装 批号 查看
MV8102 ON T-1 3/4 New 详细
BAV21TR ON DO-35 New 详细
AX8052F100-2-TW30 ON 28-QFN (5x5) New 详细
SB10-04A3-BT ON DO-41 New 详细
NV25640DWHFT3G ON 8-SOIC New 详细
MCT52113SD ON 6-SMD New 详细
H11N3SR2M ON 6-SMD New 详细
FDB088N08_F141 ON D2PAK New 详细
NM27C020Q120 ON 32-CDIP New 详细
NB6L56MNG ON 32-QFN (5x5) New 详细
FJN4313RTA ON TO-92-3 New 详细
4N37 ON 6-DIP New 详细
MC74VHCT86AM ON SOEIAJ-14 New 详细
1N459-T50R ON DO-35 New 详细
NTMS4920NR2G ON 8-SOIC New 详细
MC7924BT ON TO-220AB New 详细
H11C2W ON 6-DIP New 详细
NCV7512FTG ON 32-LQFP (7x7) New 详细
MC78M20CT ON TO-220AB New 详细
NCP380HSN10AGEVB ON New 详细