产品系列
产品系列
HGTD1N120BNS9A
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 5.3A
Current - Collector Pulsed (Icm) : 6A
Vce(on) (Max) @ Vge, Ic : 2.9V @ 15V, 1A
Power - Max : 60W
Switching Energy : 70μJ (on), 90μJ (off)
Input Type : Standard
Gate Charge : 14nC
Td (on/off) @ 25°C : 15ns/67ns
Test Condition : 960V, 1A, 82 Ohm, 15V
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package : TO-252AA
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