罗斌森
  • HGTG10N120BND

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Not For New Designs
    IGBT Type : NPT
    Voltage - Collector Emitter Breakdown (Max) : 1200V
    Current - Collector (Ic) (Max) : 35A
    Current - Collector Pulsed (Icm) : 80A
    Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 10A
    Power - Max : 298W
    Switching Energy : 850μJ (on), 800μJ (off)
    Input Type : Standard
    Gate Charge : 100nC
    Td (on/off) @ 25°C : 23ns/165ns
    Test Condition : 960V, 10A, 10 Ohm, 15V
    Reverse Recovery Time (trr) : 70ns
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-247-3
    Supplier Device Package : TO-247

极速报价

型号
品牌 封装 批号 查看
NCP4682DSQ28T1G ON SC-82AB New 详细
2SA2210 ON TO-220F-3SG New 详细
74AC521MTCX ON New 详细
MOC3163M ON 6-DIP New 详细
FAN7383MX ON 14-SOP New 详细
1N963BTR ON DO-35 New 详细
FAN4274IMU8X ON 8-MSOP New 详细
CAT9532HV6I-GT2 ON 24-TQFN (4x4) New 详细
MMSZ5256B ON SOD-123 New 详细
HUFA75321P3 ON TO-220-3 New 详细
GTLP6C816MTCX ON 24-TSSOP New 详细
LC75897PW-E ON New 详细
MPS2222 ON TO-92-3 New 详细
LV8741VGEVB ON New 详细
TIP31BG ON TO-220AB New 详细
SBAS16WT1G ON SC-70 New 详细
MC78M05BDTG ON DPAK New 详细
MMBZ5232ELT3G ON SOT-23-3 (TO-236) New 详细
STK433-330N-E ON 19-SIP New 详细
RHRD660S9A_NL ON TO-252AA New 详细