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产品系列
HGT1S2N120CN
- Manufacturer : ON Semiconductor
Packaging : Tube
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 13A
Current - Collector Pulsed (Icm) : 20A
Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 2.6A
Power - Max : 104W
Switching Energy : 96μJ (on), 355μJ (off)
Input Type : Standard
Gate Charge : 30nC
Td (on/off) @ 25°C : 25ns/205ns
Test Condition : 960V, 2.6A, 51 Ohm, 15V
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package : TO-262
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