罗斌森
  • MJ11016G

  • Manufacturer : ON Semiconductor
    Packaging : Tray
    Part Status : Active
    Transistor Type : NPN - Darlington
    Current - Collector (Ic) (Max) : 30A
    Voltage - Collector Emitter Breakdown (Max) : 120V
    Vce Saturation (Max) @ Ib, Ic : 4V @ 300mA, 30A
    Current - Collector Cutoff (Max) : 1mA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 20A, 5V
    Power - Max : 200W
    Frequency - Transition : 4MHz
    Operating Temperature : -55°C ~ 200°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-204AA, TO-3
    Supplier Device Package : TO-204 (TO-3)

极速报价

型号
品牌 封装 批号 查看
74ACT377SJ ON New 详细
NCV8160AMX180TBG ON 4-XDFN (1x1) New 详细
NZD6V2MUT5G ON 2-X3DFN (0.62x0.32) New 详细
MPS3563G ON TO-92 New 详细
5HN01M-TL-E ON 3-MCP New 详细
FDD3672 ON TO-252AA New 详细
MC10H176FNR2G ON New 详细
MID400SD ON 8-SMD New 详细
74ACT16373MTD ON 48-TSSOP New 详细
TF410-TL-HX ON New 详细
HUF75333S3ST ON D2PAK (TO-263AB) New 详细
NVD5C478NLT4G ON DPAK (SINGLE GAUGE) New 详细
NVMFS5C404NLT1G ON 5-DFN (5x6) (8-SOFL) New 详细
ADT7461ARMZ-002 ON Micro8? New 详细
MMBT4126LT1 ON SOT-23-3 (TO-236) New 详细
2SC6017-TL-EX ON 2-TP-FA New 详细
QSB34ZR ON New 详细
NLVHC14ADTR2G ON 14-TSSOP New 详细
MJD117 ON DPAK New 详细
MAN5760 ON New 详细