罗斌森
  • MJ11030G

  • Manufacturer : ON Semiconductor
    Packaging : Tray
    Part Status : Obsolete
    Transistor Type : NPN - Darlington
    Current - Collector (Ic) (Max) : 50A
    Voltage - Collector Emitter Breakdown (Max) : 90V
    Vce Saturation (Max) @ Ib, Ic : 3.5V @ 500mA, 50A
    Current - Collector Cutoff (Max) : 2mA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 25A, 5V
    Power - Max : 300W
    Operating Temperature : -55°C ~ 200°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-204AE
    Supplier Device Package : TO-3

极速报价

型号
品牌 封装 批号 查看
NCV890131MWTXG ON 10-DFN (3x3) New 详细
SZBZX84C15ET1G ON SOT-23-3 (TO-236) New 详细
MUR160G ON Axial New 详细
SFT1446-H ON TP New 详细
LM285D-2.5R2 ON 8-SOIC New 详细
1SMA9.0AT3 ON SMA New 详细
NBVSBA041LNHTAG ON 6-CLCC (7x5) New 详细
MC74LVX244DWR2 ON 20-SOIC New 详细
MPS3563 ON TO-92 New 详细
NCP1361EABAYSNT1G ON 6-TSOP New 详细
MC10EL58DTG ON 8-TSSOP New 详细
MBR840RL ON DO-201AD New 详细
FDS8882 ON 8-SOIC New 详细
MMBFJ310LT3G ON SOT-23-3 (TO-236) New 详细
NTHD4N02FT1 ON ChipFET? New 详细
MC34074DR2G ON 14-SOIC New 详细
MR34519MP6 ON New 详细
MC33269ST-3.3T3G ON SOT-223 New 详细
NSL12AWT1G ON SC-88/SC70-6/SOT-363 New 详细
NCP133AMX150TCG ON 6-XDFN (1.2x1.2) New 详细