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MJD112G
- Manufacturer : ON Semiconductor
Packaging : Tube
Alternate Packaging
Part Status : Active
Transistor Type : NPN - Darlington
Current - Collector (Ic) (Max) : 2A
Voltage - Collector Emitter Breakdown (Max) : 100V
Vce Saturation (Max) @ Ib, Ic : 3V @ 40mA, 4A
Current - Collector Cutoff (Max) : 20μA
DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 2A, 3V
Power - Max : 1.75W
Frequency - Transition : 25MHz
Operating Temperature : -65°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package : DPAK
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