罗斌森
  • MJD112T4G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : NPN - Darlington
    Current - Collector (Ic) (Max) : 2A
    Voltage - Collector Emitter Breakdown (Max) : 100V
    Vce Saturation (Max) @ Ib, Ic : 3V @ 40mA, 4A
    Current - Collector Cutoff (Max) : 20μA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 2A, 3V
    Power - Max : 20W
    Frequency - Transition : 25MHz
    Operating Temperature : -65°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
    Supplier Device Package : DPAK

极速报价

型号
品牌 封装 批号 查看
CS5253B-8GDPR5G ON D2PAK-5 New 详细
FPF2164 ON 6-MicroFET (2x2) New 详细
LM201ADG ON 8-SOIC New 详细
SBCP56T1G ON SOT-223-3 New 详细
DM74ALS521WMX ON New 详细
MC74VHCT04AMELG ON SOEIAJ-14 New 详细
MC74AC125DG ON 14-SOIC New 详细
NCP305LSQ47T1 ON SC-82AB New 详细
FYP1045DNTU ON TO-220-3 New 详细
FOD2742CR2 ON 8-SOIC New 详细
2SD1816T-E ON TP New 详细
H11G2W ON 6-DIP New 详细
LC75839PWS-T-H ON 64-SQFP (10x10) New 详细
74ALVCH162244T ON 48-TSSOP New 详细
1V5KE13A ON DO-201AE New 详细
74ABT245CSJX ON 20-SOP New 详细
BC81725MTF ON SOT-23-3 New 详细
BZX79C51_T50R ON DO-35 New 详细
LC717A10AJ-AH ON 30-SSOP New 详细
74VHCT541AMTCX ON 20-TSSOP New 详细