罗斌森
  • MJD117-1G

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Active
    Transistor Type : PNP - Darlington
    Current - Collector (Ic) (Max) : 2A
    Voltage - Collector Emitter Breakdown (Max) : 100V
    Vce Saturation (Max) @ Ib, Ic : 3V @ 40mA, 4A
    Current - Collector Cutoff (Max) : 20μA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 2A, 3V
    Power - Max : 1.75W
    Frequency - Transition : 25MHz
    Operating Temperature : -65°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
    Supplier Device Package : I-PAK

极速报价

型号
品牌 封装 批号 查看
H11B815SD ON 4-SMD New 详细
CNY171FR2M ON 6-SMD New 详细
MC74HC160ADR2G ON 16-SOIC New 详细
4N28W ON 6-DIP New 详细
MC100E451FNR2G ON New 详细
QTLP651CYTR ON 1206 New 详细
FDS5680 ON 8-SOIC New 详细
FQPF5N50CTTU ON TO-220F New 详细
MM3Z16VT1 ON SOD-323 New 详细
74ACT273PC ON New 详细
KSD2012YTU ON TO-220F New 详细
NCT218FCT2G ON 8-WLCSP New 详细
NCV4299D1R2G ON 8-SOIC New 详细
QL484GT ON T-1 New 详细
74LVT574SJ ON New 详细
NCP5359DR2G ON 8-SOIC New 详细
NUD3124LT1 ON SOT-23-3 (TO-236) New 详细
MCT62W ON 8-DIP New 详细
NCP3065D2SLDGEVB ON New 详细
H11AG3 ON 6-DIP New 详细