罗斌森
  • MJD122G

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Alternate Packaging
    Part Status : Active
    Transistor Type : NPN - Darlington
    Current - Collector (Ic) (Max) : 8A
    Voltage - Collector Emitter Breakdown (Max) : 100V
    Vce Saturation (Max) @ Ib, Ic : 4V @ 80mA, 8A
    Current - Collector Cutoff (Max) : 10μA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 4A, 4V
    Power - Max : 1.75W
    Frequency - Transition : 4MHz
    Operating Temperature : -65°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
    Supplier Device Package : DPAK

极速报价

型号
品牌 封装 批号 查看
NCP81119AMNTXG ON New 详细
FDB047N10 ON D2PAK New 详细
NVTR01P02LT1G ON SOT-23-3 New 详细
ISL9V3036P3 ON TO-220-3 New 详细
FDC8886 ON SuperSOT?-6 New 详细
NCP4682HMU33TCG ON 4-UDFN (1.0x1.0) New 详细
LC75839PW-H ON 64-SQFP (10x10) New 详细
1N5987B ON DO-35 New 详细
NCP1616A1DR2G ON 9-SOIC New 详细
MMBD4148SE ON SOT-23-3 New 详细
NCP729FC08T2G ON 4-CSP (1.06x1.06) New 详细
STK672-432A-E ON New 详细
NCL2801CFADR2G ON New 详细
CAT1023LI-42-G ON 8-PDIP New 详细
74AC14CW ON New 详细
74VHC595MTC ON 16-TSSOP New 详细
1N4742A_T50R ON DO-41 New 详细
NDS352AP ON SuperSOT-3 New 详细
MPS650RLRAG ON TO-92-3 New 详细
MC10H642FN ON 28-PLCC (11.51x11.51) New 详细