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MJD200G
- Manufacturer : ON Semiconductor
Packaging : Tube
Alternate Packaging
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 5A
Voltage - Collector Emitter Breakdown (Max) : 25V
Vce Saturation (Max) @ Ib, Ic : 1.8V @ 1A, 5A
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 45 @ 2A, 1V
Power - Max : 1.4W
Frequency - Transition : 65MHz
Operating Temperature : -65°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package : DPAK
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