罗斌森
  • MJE181G

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Active
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 3A
    Voltage - Collector Emitter Breakdown (Max) : 60V
    Vce Saturation (Max) @ Ib, Ic : 1.7V @ 600mA, 3A
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 100mA, 1V
    Power - Max : 1.5W
    Frequency - Transition : 50MHz
    Operating Temperature : -65°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-225AA, TO-126-3
    Supplier Device Package : TO-225AA

极速报价

型号
品牌 封装 批号 查看
P3P8163AG-08SR ON 8-SOIC New 详细
IRLR210ATM ON D-Pak New 详细
P3P73U00AG-08SR ON 8-SOIC New 详细
MC33364D1G ON 8-SOIC New 详细
NTD4815NHT4G ON DPAK New 详细
5LN01SP ON 3-SPA New 详细
BZX84C30LT1 ON SOT-23-3 (TO-236) New 详细
FDS8949-F085 ON 8-SOIC New 详细
FLZ18VA ON SOD-80 New 详细
SZMMSZ5227BT1G ON SOD-123 New 详细
NJVMJD243T4G ON DPAK New 详细
MJD42CT4G ON DPAK New 详细
LM285D-1.2R2G ON 8-SOIC New 详细
FSUSB30BQX ON 14-DQFN (3x2.5) New 详细
NCP1086ST-33T3G ON SOT-223 New 详细
100351SCX ON New 详细
SBC846ALT1G ON SOT-23-3 (TO-236) New 详细
1.5SMC91AT3 ON SMC New 详细
MM5Z3V3T1G ON SOD-523 New 详细
FEB167 ON New 详细