罗斌森
  • MJE200G

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Active
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 5A
    Voltage - Collector Emitter Breakdown (Max) : 40V
    Vce Saturation (Max) @ Ib, Ic : 1.8V @ 1A, 5A
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 45 @ 2A, 1V
    Power - Max : 15W
    Frequency - Transition : 65MHz
    Operating Temperature : -65°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-225AA, TO-126-3
    Supplier Device Package : TO-225AA

极速报价

型号
品牌 封装 批号 查看
SS9014BTA ON TO-92-3 New 详细
FQT13N06LTF ON SOT-223-4 New 详细
MUR860G ON TO-220AC New 详细
CAT25160YI-GT3 ON 8-TSSOP New 详细
NDS9407 ON 8-SOIC New 详细
CAT28F001GI-12T ON 32-PLCC (11.43x13.97) New 详细
TL431CLPG ON TO-92-3 New 详细
SZMMBZ27VALT3G ON SOT-23-3 (TO-236) New 详细
MC78L15ABDR2G ON 8-SOIC New 详细
MC74LCX139MEL ON 16-SOEIAJ New 详细
NTD80N02-1G ON I-PAK New 详细
FAN8024EDTF ON 28-SSOPH-375 New 详细
MC78LC30NTRG ON 5-TSOP New 详细
LM2904SNG ON 8-PDIP New 详细
NCV7517FTG ON 32-LQFP (7x7) New 详细
LM285D-2.5G ON 8-SOIC New 详细
74OL6010300W ON 6-DIP New 详细
NC7ST02L6X ON 6-MicroPak New 详细
1N962B ON DO-35 New 详细
MJD3055 ON DPAK New 详细