罗斌森
  • MJE350G

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Active
    Transistor Type : PNP
    Current - Collector (Ic) (Max) : 500mA
    Voltage - Collector Emitter Breakdown (Max) : 300V
    Current - Collector Cutoff (Max) : 100μA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 50mA, 10V
    Power - Max : 20W
    Operating Temperature : -65°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-225AA, TO-126-3
    Supplier Device Package : TO-225AA

极速报价

型号
品牌 封装 批号 查看
NCP1215DR2G ON 8-SOIC New 详细
NCP1117DT18RKG ON DPAK New 详细
NCP81161MNTWG ON 8-DFN (2x2) New 详细
FQB16N25CTM ON D2PAK (TO-263AB) New 详细
FAN6921MRMY ON 16-SOP New 详细
5LP01M-TL-HX ON 3-MCP New 详细
KSC5502DTTU ON TO-220-3 New 详细
SS8050CTA ON TO-92-3 New 详细
1N5993B_T50R ON DO-35 New 详细
HLMPQ155AGR ON Subminiature T-3/4 New 详细
DM74AS648WM ON 24-SOP New 详细
NRVHPM120T3G ON Powermite New 详细
100EL16MX ON 8-SOIC New 详细
74F413PC ON 16-DIP New 详细
NCP1051ST136T3 ON SOT-223 New 详细
FAN3850AUC19X ON 6-WLCSP (1.26x0.86) New 详细
74VCX16245GX ON 54-FBGA (5.5x8) New 详细
LM2901VDR2G ON 14-SOIC New 详细
NCP382HD15AAGEVB ON New 详细
FYD0504SATM ON D-Pak New 详细