罗斌森
  • MJE800G

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Active
    Transistor Type : NPN - Darlington
    Current - Collector (Ic) (Max) : 4A
    Voltage - Collector Emitter Breakdown (Max) : 60V
    Vce Saturation (Max) @ Ib, Ic : 2.5V @ 30mA, 1.5A
    Current - Collector Cutoff (Max) : 100μA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 750 @ 1.5A, 3V
    Power - Max : 40W
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-225AA, TO-126-3
    Supplier Device Package : TO-225AA

极速报价

型号
品牌 封装 批号 查看
NCP337FCT2GEVB ON New 详细
74F899SC ON 28-SOIC New 详细
MMUN2212LT1G ON SOT-23-3 (TO-236) New 详细
MC74ACT00MELG ON SOEIAJ-14 New 详细
MC34063LBBGEVB ON New 详细
KSC900CGTA ON TO-92-3 New 详细
PZT2222AT3G ON SOT-223 New 详细
1N5986B_T50R ON DO-35 New 详细
4N303SD ON 6-SMD New 详细
NCP4680DSQ12T1G ON SC-88A (SC-70-5/SOT-353) New 详细
NCP4354ADR2G ON 8-SOIC New 详细
MC78L05ACHX ON SOT-89-3 New 详细
CM1692-08DE ON New 详细
NSR15SDW1T2G ON SC-88/SC70-6/SOT-363 New 详细
74F258APC ON 16-PDIP New 详细
MAN493C ON New 详细
74AC04PC ON 14-PDIP New 详细
LP2950ACDT-3.0 ON DPAK New 详细
FQD10N20TM ON D-Pak New 详细
NCP1013ST100T3G ON SOT-223 New 详细