罗斌森
  • N02L63W3AT25I

  • Manufacturer : ON Semiconductor
    Packaging : Tray
    Part Status : Obsolete
    Memory Type : Volatile
    Memory Format : SRAM
    Technology : SRAM - Asynchronous
    Memory Size : 2Mb (128K x 16)
    Write Cycle Time - Word, Page : 55ns
    Access Time : 55ns
    Memory Interface : Parallel
    Voltage - Supply : 2.3V ~ 3.6V
    Operating Temperature : -40°C ~ 85°C (TA)
    Mounting Type : Surface Mount
    Package / Case : 44-TSOP (0.400", 10.16mm Width)
    Supplier Device Package : 44-TSOP II

极速报价

型号
品牌 封装 批号 查看
MC74VHC32DTR2G ON 14-TSSOP New 详细
BC557BTA ON TO-92-3 New 详细
KAI-11002-CAA-CD-B2 ON 40-CDIP New 详细
MC78M20CT ON TO-220AB New 详细
BC373ZL1G ON TO-92-3 New 详细
BZX85C11_T50R ON DO-204AL (DO-41) New 详细
FDMS86550 ON Power56 New 详细
FGH60N60SMD-F085 ON TO-247-3 New 详细
NCP702SN30T1GEVB ON New 详细
GMA8675C ON New 详细
NCV8502PDW80R2G ON 16-SOIC New 详细
NB4L16MMN ON 16-QFN (3x3) New 详细
MM74HC4538N ON 16-PDIP New 详细
NVMFS5C460NLWFAFT1G ON 5-DFN (5x6) (8-SOFL) New 详细
NP3100GARLG ON New 详细
MCH3478-S-TL-H ON 3-MCPH New 详细
FSB50825AS ON New 详细
FGB20N6S2D ON TO-263AB New 详细
74OL6011W ON 6-DIP New 详细
21255-901-EPC ON New 详细