罗斌森
  • N04L63W1AB27I

  • Manufacturer : ON Semiconductor
    Packaging : Tray
    Part Status : Obsolete
    Memory Type : Volatile
    Memory Format : SRAM
    Technology : SRAM - Asynchronous
    Memory Size : 4Mb (256K x 16)
    Write Cycle Time - Word, Page : 70ns
    Access Time : 70ns
    Memory Interface : Parallel
    Voltage - Supply : 2.3V ~ 3.6V
    Operating Temperature : -40°C ~ 85°C (TA)
    Mounting Type : Surface Mount
    Package / Case : 48-LFBGA
    Supplier Device Package : 48-BGA (6x8)

极速报价

型号
品牌 封装 批号 查看
NSVBAT54LT1G ON SOT-23-3 (TO-236) New 详细
BZX79C30_T50R ON DO-35 New 详细
CAT5110TBI-10-T3 ON New 详细
QTLP912RGR ON Subminiature T-3/4 New 详细
NBC12429AMNR4G ON New 详细
MC74VHCU04MELG ON SOEIAJ-14 New 详细
NP3100SEMCT3G ON New 详细
74ACT825SC ON New 详细
CAT6221-SGTD-GT3 ON TSOT-23-6 New 详细
FQH70N10 ON TO-247 New 详细
FMS6413CSX ON 8-SOIC New 详细
FSB50250US ON New 详细
SMF64AT1G ON SOD-123FL New 详细
FPDB30PH60 ON New 详细
MC33164P-5RP ON TO-92-3 New 详细
NCP1072STBT3G ON SOT-223 (TO-261) New 详细
MAC8SM ON TO-220AB New 详细
NB3N65027DTR2G ON 20-QSOP New 详细
MC100EL58DT ON 8-TSSOP New 详细
S2J ON DO-214AA (SMB) New 详细