罗斌森
  • N04L63W1AT27I

  • Manufacturer : ON Semiconductor
    Packaging : Tray
    Part Status : Obsolete
    Memory Type : Volatile
    Memory Format : SRAM
    Technology : SRAM - Asynchronous
    Memory Size : 4Mb (256K x 16)
    Write Cycle Time - Word, Page : 70ns
    Access Time : 70ns
    Memory Interface : Parallel
    Voltage - Supply : 2.3V ~ 3.6V
    Operating Temperature : -40°C ~ 85°C (TA)
    Mounting Type : Surface Mount
    Package / Case : 44-TSOP (0.400", 10.16mm Width)
    Supplier Device Package : 44-TSOP II

极速报价

型号
品牌 封装 批号 查看
ES1JAF ON DO-214AD (SMAF) New 详细
NTMD2P01R2 ON 8-SOIC New 详细
NCS2551SNT1G ON 5-TSOP New 详细
MMSZ4689T3 ON SOD-123 New 详细
NCP1117ST15T3G ON SOT-223 New 详细
MC10H176MG ON New 详细
RMPA5251 ON 16-LCC (3x3) New 详细
J106 ON TO-92-3 New 详细
FQI9N08LTU ON I2PAK (TO-262) New 详细
NCV7001DWR2 ON 24-SOIC New 详细
LM317LZRM ON TO-92-3 New 详细
FIN1002M5 ON SOT-23-5 New 详细
FJAF6810TU ON TO-3PF New 详细
LM2901VD ON 14-SOIC New 详细
MUR1515 ON TO-220-2 New 详细
DM74ALS645AN ON 20-PDIP New 详细
NCP4687DMX25TCG ON 6-XDFN (1.2x1.2) New 详细
MMT05B310T3 ON New 详细
NCP1216AD100R2 ON 8-SOIC New 详细
SMMBT3906LT1G ON SOT-23-3 (TO-236) New 详细