罗斌森
  • N04L63W2AT27I

  • Manufacturer : ON Semiconductor
    Packaging : Tray
    Part Status : Obsolete
    Memory Type : Volatile
    Memory Format : SRAM
    Technology : SRAM - Asynchronous
    Memory Size : 4Mb (256K x 16)
    Write Cycle Time - Word, Page : 70ns
    Access Time : 70ns
    Memory Interface : Parallel
    Voltage - Supply : 2.3V ~ 3.6V
    Operating Temperature : -40°C ~ 85°C (TA)
    Mounting Type : Surface Mount
    Package / Case : 44-TSOP (0.400", 10.16mm Width)
    Supplier Device Package : 44-TSOP II

极速报价

型号
品牌 封装 批号 查看
NCP5007SNT1G ON 5-TSOP New 详细
LV8824QA-NH ON 32-VQFN (5x5) New 详细
PN4275_D26Z ON TO-92-3 New 详细
NCP134AMX100TCG ON 4-XDFN (1.2x1.2) New 详细
BC548ATFR ON TO-92-3 New 详细
CAT853MTBI-T3 ON SOT-23-3 New 详细
AR0140AT3C00XUEA0-DPBR2 ON 63-iBGA (9x9) New 详细
SZBZX84C30LT1G ON SOT-23-3 (TO-236) New 详细
LM239DTBR2G ON 14-TSSOP New 详细
MC74VHC257M ON 16-SOEIAJ New 详细
STK672-631A-E ON New 详细
74LVX04MTC ON 14-TSSOP New 详细
MC78L15ACDR2G ON 8-SOIC New 详细
MMSZ4685T1 ON SOD-123 New 详细
2N5951_D27Z ON TO-92-3 New 详细
MC100EL35DTG ON New 详细
FDMC7678 ON 8-MLP (3.3x3.3) New 详细
MAC4DLM-001 ON I-PAK New 详细
1N4933 ON DO-41 New 详细
P1P40167MNTWG ON 16-QFN (3x3) New 详细