罗斌森
  • MMBTH10LT1

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Part Status : Obsolete
    Transistor Type : NPN
    Voltage - Collector Emitter Breakdown (Max) : 25V
    Frequency - Transition : 650MHz
    Power - Max : 225mW
    DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 4mA, 10V
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-236-3, SC-59, SOT-23-3
    Supplier Device Package : SOT-23-3 (TO-236)

极速报价

型号
品牌 封装 批号 查看
1N483BTR ON DO-35 New 详细
LB11683V-MPB-E ON 24-SSOP New 详细
NSV1SS400T1G ON SOD-523 New 详细
MOC5009VM ON 6-DIP New 详细
LV8548MC-AH ON 10-SOIC New 详细
LP2950CZ-3.3RA ON TO-92-3 New 详细
NCP580SQ15T1G ON SC-82AB New 详细
NCV8506D2T33 ON D2PAK-7 New 详细
KSC1009CYTA ON TO-92-3 New 详细
MC100LVEP111MNG ON 32-QFN (5x5) New 详细
2SC3649T-TD-E ON PCP New 详细
NCN5192MNG ON 32-QFN (5x5) New 详细
NSS60600MZ4T3G ON SOT-223 New 详细
MUR820G ON TO-220AC New 详细
FAN2510S26X ON SOT-23-5 New 详细
STK621-033K-E ON New 详细
AR0260LCSC28SUKAH-GEVB ON New 详细
NTD14N03RG ON DPAK New 详细
NCP1053ST136T3G ON SOT-223 New 详细
PN4917_D27Z ON TO-92-3 New 详细