产品系列
产品系列
MMBTH10LT1G
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 25V
Frequency - Transition : 650MHz
Power - Max : 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 4mA, 10V
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SOT-23-3 (TO-236)
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