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产品系列
NCP5111DR2G
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
Driven Configuration : Half-Bridge
Channel Type : Synchronous
Number of Drivers : 2
Gate Type : IGBT, N-Channel MOSFET
Voltage - Supply : 10V ~ 20V
Logic Voltage - VIL, VIH : 0.8V, 2.3V
Current - Peak Output (Source, Sink) : 250mA, 500mA
Input Type : Non-Inverting
High Side Voltage - Max (Bootstrap) : 600V
Rise / Fall Time (Typ) : 85ns, 35ns
Operating Temperature : -40°C ~ 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SOIC
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